Moisture-proofed semiconductor element



Nov. 10, 1959 2,9l2,354

MoISTURE-PRO0FED SEMICONDUGTOR ELEMENT Fi1ed june 19, 1958 

1. A P-N JUNCTION SEMICONDUCTOR COMPRISING A MOISTURE-PROOFING COATING MADE OF MATERIAL WHICH COACTS WITH THE MATERIAL IS SAID ELEMENT TO ABSORB WATER MOLECULES AND TO RELEASE AMOUNTS OF OXYGEN EQUIVALENT THERETO, THE OXYGEN RELEASED BEING OPERATIVE TO OXIDIZE SAID SEMICONDUCTOR MATERIAL AT LEAST PARTIALLY, SAID COATING MATERIAL COMPRISING AT LEAST A COMPONENT OF A REDUCTION-OXIDATION SYSTEM SELECTED FROM THE GROUP CONSISTING OF P-QUINONE/ HYDROQUINONE; THYMOQUINON/THYMOHYDROQUINONE; DIPHENYLAMIN/DIPHENYLBENZIDIN; INDIGO/INDOL; SYSTEMS OF THE KIND OF DISULFIDE COMPOUND/SULFHYDRYL COMPOUND; AND TRIARYLMETHANE SYSTEMS. 